MRAM
相关结果约111条MRAM选型帮助
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【产品】瑞萨新型MRAM系列,业界领先的非易失性存储器,4Mb到16Mb高存储密度
瑞萨电子的新型MRAM器件系列拥有从4Mb到16Mb的高存储密度,并且允许以10 e16周期的超高寿命连续覆盖数据。对于设备操作,瑞萨MRAM产品允许几乎无休止的写入周期、连续的数据日志记录和事件记录,而没有写入延迟。与其它非易失性存储器相比,瑞萨高性能MRAM产品具有读取速度快、存储密度高、寿命长、电压低等特点。
【应用】瑞萨最新MRAM产品线采用垂直磁隧道结自旋转移力矩的专有技术,满足数字助听器的存储需求
MRAM代表了瑞萨最新的存储器产品线。这些MRAM是快速的非易失性存储器,具有极低的延迟访问和超高的耐用性。它们具有通过行业标准SPI接口进行的简单随机存取存储器操作,故易于使用且占用空间小。MRAM的这些关键优势使其成为高级助听器应用的最佳解决方案。
【产品】瑞萨电子推出新一代高性能磁阻随机存取存储器(MRAM),支持4Mb到16Mb高存储密度
瑞萨电子通过利用垂直磁隧道结STT(自旋转移矩效应)这一技术,推出了新一代的磁阻随机存取存储器(MRAM),以实现同类最佳的非易失性存储器,并具有长数据保留,持久性和快速串行接口等特性。 瑞萨的MRAM具有较高的存储密度和较高的工作温度,适用于从需要快速备份数据检索的工厂自动化设备到具有长期数据存储要求的医疗数据单元的各种应用。
Renesas offers the next generation MRAM by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT
Renesas offers the next generation magnetoresisitve random-access memory (MRAM) by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT (Spin-transfer Torque) to achieve best-in-class non-volatile memory with long data retention and a fast serial interface. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.
【产品】4Mbit~16Mbit磁阻随机存取存储器(MRAM)Mxxxx204,数据可在85°C时保留超过20年
RENESAS公司推出的Mxxxx204系列为磁阻随机存取存储器(MRAM)。它的密度范围从4Mbit到16Mbit。MRAM技术类似于Flash技术,具有SRAM兼容的读/写时序。其数据始终能够保持非易失性的,具有10^16个写周期的耐久性,在85°C时保留超过20年。
Everspin Demonstrates MRAM Leadership at MRAM Developer Day Flash Memory Summit
Everspin’s State-of-the-Art MRAM Technology How Everspin’s Patented MRAM Memory Technology
Using MRAM to Optimize System Energy Consumption
Toggle and Spin Torque MRAM: Status and Outlook
UT8MR2M8 16M MRAM time/temperature induced bit-error anomaly
Magnetic Field Immunity of Everspin MRAM
MRAM Improvements to Automotive Non- Volatile Memory Storage
Replacing Everspin QSPI MRAM with Cypress QSPI nvSRAM
Everspin enhances RIM smart meters with instantly non-volatile, low-energy MRAM memory
FREESCALE FREESCALE DEVICE MIGRATION 12887 TSPG MCD MRAM MR2A16A MASK REVISION
IDT宣布提供Avalanche Technology公司的MRAM器件以补充电源,传感器,定时和微控制器设备
2019年10月17日,瑞萨电子公司的全资子公司Integrated Device Technology,Inc.(IDT)宣布提供Avalanche Technology公司的磁RAM(MRAM)设备,以补充瑞萨公司的电源、传感器、定时和微控制器设备。
1Mb Serial SPI MRAM MR25H10
Dual Supply 128K x 8 MRAM MR0DL08B
Standard Products UT8MR2M8 16Megabit Non-Volatile MRAM Datasheet
Standard Products UT8MR8M8 64Megabit Non-Volatile MRAM Datasheet
M1004204/M1008204/M1016204 M3004204/M3008204/M3016204 High Performance Serial MRAM Memory
MR5A16A 32Mb MRAM Datasheet
MR1A16A 128K x 16 MRAM Memory Datasheet
MR3A16A 512K x 16 MRAM Datasheet
1M x 16 MRAM MR4A16B 数据手册
1M x 16 MRAM MR4A16B 数据手册
Comparing Technologies: MRAM vs. FRAM
Approximating the Magnetic Field When Using Everspin MRAM
Impact of External Magnetic Fields on MRAM Product Application Note
Replacing the Cypress CY62168EV30LL-45BVXI MoBL SRAM with Everspin MR4A08B MRAM
Replacing the Cypress CY14V101LA-BA45 nvSRAM with Everspin’s MR0D08BMAxx MRAM
Replacing the Cypress CY14V256LA-BA35 nvSRAM with Everspin’s MR256D08BMA45 MRAM
Replacing the Cypress CY14U256LA-BA35 nvSRAM with Everspin’s MR256DL08BMA45 MRAM
Aeroflex Colorado Springs Application Note SEFI Work-Arounds for MRAM Devices
Aeroflex Colorado Springs Application Note Magnetic Immunity of the MRAM Devices
Replacing the Cypress CY14B104NA-BA/ZS45XI nvSRAM with Everspin MR2A16Axxx35 MRAM
Everspin SOIC MRAM Package Guide
Everspin SOIC MRAM Package Guide
Everspin MRAM DFN Package Guide
Everspin MRAM DFN Package Guide
Everspin 48-ball BGA MRAM Packages
Everspin 48-ball BGA MRAM Packages
Everspin TSOP2 MRAM Package Guide
Everspin TSOP2 MRAM Package Guide
Everspin 24-ball BGA MRAM Package
UT8MR8M8 64M MRAM Multi-Bit Error (MBE) detect pin behavior and functionality
Product/Process Change Notice Additional assembly site for 16Mb MRAM in 48-BGA Package
Product/Process Change Notice 16Mb MRAM in 48-BGA Package Moisture Sensitivity Level
Product/Process Change Notice 16Mb MRAM in 48-BGA Package Moisture Sensitivity Level
Product and Process Change Notice Notice of Upgrade of Moisture Sensitivity Level of 16Mb MRAM in BGA package to MSL-3
Everspin Serial Peripheral Interface (SPI) MRAM Evaluation Board Guide
MR25H00-EVAL Everspin SPI MRAM Evaluation Board User Guide
MR10Q010-EVAL1 Everspin Quad SPI MRAM Evaluation Board User Guide
Standard Products UT8MR8M8-EVB 64Megabit Non-Volatile MRAM Evaluation Board User Manual
MRAM,FRAM,SRAM三种存储芯片的区别?分别应用在什么情况下?
超过85摄氏度环境工作温度会加速FRAM磨损,而MRAM可以在125摄氏度的温度下将数据保留长达20年,MRAM几乎提供无限的耐用性(10e16次访问)。SRAM的速度快但价格昂贵,一般用小容量SRAM作为更高速CPU和较低速DRAM间的缓存。
工业中应用中的非易失性MRAM芯片有那些?最好提供一下数据手册参数?
新兴存储技术为何会在短时间内取得快速发展?如PCM、MRAM、ReRAM、FRAM等存储器。
非易失性RAM容量有64MB的吗?
Aeroflex Colorado Springs Standard Products Application Engineering Serial Programming the Aeroflex 64Mbit MRAM for Configuring the Xilinx Virtex-5 FPGA
UT8MR2M8 16M and UT8MR8M8 64M MRAMs Frequently Asked Questions
VertiCal Calibration MRAM Board
Toggle MRAM Magnetoresistive Random Access Memory brochure
Renesas Standard SRAM Product Outline
现货供应Keysight电流波形分析仪,并可提供样机演示
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