EPC（宜普）eGaN® 氮化镓晶体管（GaN FET）和集成电路及开发板/演示板/评估套件选型指南
eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
EPC - EPC2212,MOTOR DRIVE,EGAN®集成电路,半桥开发板,同步、降压或升压、数字控制器、QFN封装氮化镓场效应晶体管,同步降压或升压数字控制器,ETOF™激光驱动器,EGAN® INTEGRATED CIRCUITS,PCB-BASED HALF-BRIDGE CIRCUIT MODULE,HALF-BRIDGE DEVELOPMENT BOARD,EGAN ICS,LASER DRIVER IC,SYNCHRONOUS, BUCK OR BOOST, DIGITAL CONTROLLER, QFN-PACKAGED GAN FETS,开发板,EGAN FETS,DIGITAL CONTROLLER,PCB-BASED GAN IC POWER MODULE,GAN POWER IC,演示板,SMALL (1/16TH BRICK), SYNCHRONOUS BUCK, WITH MOTHERBOARD,基于PCB的半桥电路模块,DEVELOPMENT BOARDS,3-PHASE BLDC MOTOR DRIVE REFERENCE DESIGN BOARD,LIDAR,抗辐射氮化镓场效应晶体管,RAD HARD GAN FETS,ETOF™ LASER DRIVER IC,DEMONSTRATION BOARDS,大电流脉冲激光二极管驱动演示板,HIGH CURRENT PULSED LASER DIODE DRIVER DEMO BOARD,同步，降压，数字控制器，氮化镓功率IC,氮化镓场效应晶体管,基于PCB的氮化镓IC功率模块,三相BLDC电机驱动参考设计板,ANALOG CONTROLLER,INTEGRATED CIRCUITS,评估套件, SYNCHRONOUS BUCK OR BOOST, FEATURING POWERSTAGE GAN IC,半桥加驱动器,小型（1/16砖式），同步降压或升压，采用功率级氮化镓IC，数字控制器，带主板,EVALUATION KITS, BUCK, GAN POWER IC,HALF BRIDGE PLUS DRIVER,氮化镓集成电路,双输出模拟控制器,ETOF™ LASER DRIVER,ETOF™激光驱动器IC,DEVELOPMENT BOARD,小型（1/16砖式），同步降压，数字控制器，带主板,HALF-BRIDGE DEVELOPMENT BOARDS,DUAL OUTPUT, ANALOG CONTROLLER,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2016C,EPC2050,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC9087,EPC90154,EP,激光雷达,SERVERS,服务器,电动机驱动
EPC半桥Demo选型表
EPC提供半桥Demo选型：VDS(最大值)（V）：20V~350V，Id(RMS最大值)（A)：1A~65A
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产品型号
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品类
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Description
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VDS max(V)
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ID(max RMS)(A)
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Featured Product
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EPC9086
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开发板
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Half Bridge Plus Driver
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30
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15
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EPC2111
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选型表 - EPC 立即选型
广告 发布时间 : 2025-01-06
EPC评估套件选型表
EPC提供评估板的选型：Default Configuration：IToF、Resonant Pulse DToF;VBUS (max)(V):12~160V;VINPUT(max)(V):5 V;Tpin(min)(ns):1 ns/2 ns
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产品型号
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品类
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Description
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VIN(V)
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VOUT(V)
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IOUT (A)
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Featured Product
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EPC9163
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评估板
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Synchronous, Buck or Boost, digital controller
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Buck: 20 – 60 V
Boost: 11.3 – 16 V
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Buck: 5 - 16 V
Boost: 20-50 V
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140 A (Buck)
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EPC2218
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选型表 - EPC 立即选型
EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型：配置：Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101，VDS最大值（V）：15~350V；VGS最大值（V）：5.75~7V
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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选型表 - EPC 立即选型
【经验】揭秘自动驾驶激光雷达激光发射器电路设计原理
激光雷达激光发射器电需要完成电信号转光信号，其输出的光信号还要经过透镜聚焦后发射到目标物体，再将反射回的光信号通过透镜处理给TOF接收器接收。
【经验】LiDar开发板EPC9126 1-2ns窄脉冲信号产生设计原理及调试技巧
EPC公司的EPC9126是针对远距离直接飞行时间（DToF：Direct ToF）应用的大电流激光二极管驱动器的LiDar开发板，激光管需求窄脉冲驱动，EPC9126开发板中提供1-2ns窄脉冲信号，下面介绍下该信号产生的设计原理和部分设计指导。
EPC9178凭借紧凑、可靠、具有成本效益的GaN技术，应用于设计高效太阳能优化器，提高能源效率
全球增强型氮化镓（eGaN®）功率器件的领导者EPC隆重推出EPC9178，一款最新的光伏（PV）优化器参考设计。EPC9178旨在通过减少太阳能系统中的无源元件，从而提高能效和降低成本，以满足高可靠性的需求，同时应对能源效率和成本效益的关键挑战，展示了GaN技术在可再生能源解决方案中的变革潜力。
AP8003 1.0版和EPC2052相脚1.0版和AP1045 1.2版和EPC9177 B5346 1.0版原理图
这份资料主要涉及了多个元器件的规格和电路设计，包括PIR80002、NL3V3 3V3、PGDPGC等，以及相关的编程、电源管理、模拟输入等电路设计。资料中还包括了EPC2052 Phase Leg、AP8003 Rev. 1.0、AP1045 Rev. 1.2等元器件的详细信息和电路图。
EPC - EPC2052,28引脚6X6 DSPIC控制器,HF CAPACITORS,BI-DIRECTIONAL 65 V CURRENT SENSE AMPLIFIER,28 PIN 6X6 DSPIC CONTROLLER,双向65 V电流检测放大器,高频电容器,AP8003,B5346,EPC9177
How to Design A Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN® FETs
A high efficiency, high power density, 2.5 kW capable eGaN FET-based 4-level flying capacitor multi-level bridgeless totem-pole rectifier that is suitable for data center applications was presented. The 200 V rated, 8 mΩ, EPC2215 was used in the high frequency leg that resulted in a converter that exceeded 99% efficiency from 900 W through 2.5 kW with a peak of 99.25% at 1.4 kW.
使用增强型硅上氮化镓功率FET（氮化镓®FET）应用笔记
EPC - EPC2014,氮化镓功率晶体管,EGAN FETS,氮化镓®场效应晶体管,EGAN® FETS,GAN TRANSISTORS,增强型硅基氮化镓功率场效应晶体管,ENHANCEMENT MODE GAN-ON-SILICON POWER FETS,氮化镓晶体管,超高速增强型氮化镓功率晶体管,氮化镓场效应晶体管,HYPER-FAST ENHANCEMENT MODE GALLIUM NITRIDE POWER TRANSISTORS,GAN POWER TRANSISTORS,EPC2015,EPC2007,EPC2021,EPC2010,EPC2001,EPC2012,转换器,CONVERTER
GaN Transistor for Several Power Applications
GaN transistors are significantly faster and smaller than silicon MOSFETs. The performance of GaN shows that efficiency and performance have improved significantly, leading to several new applications that were not possible with silicon technology. eGaN® FETs, from EPC, are supplied in a low inductance, low resistance, small and low-cost LGA or BGA packages. In addition, they offer designers the best in class compared to MOSFETs in both hard switching and soft-switching applications.
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