Elektron Power on相关结果约135029条
The power-optimizing EFR32BG22 Wireless SoC enables IoT devices to operate up to 10 years on a single coin cell battery
EFR32BG22 (BG22) is Silicon Labs‘s most energy-friendly wireless system-on-chip (SoC). Equipped with an Arm® Cortex®-M33 core, BG22 SoCs achieve extremely low power levels while in an operational sleep state down to 1.4 µA. These devices are Bluetooth 5.2 compliant, support direction finding and low-power Bluetooth mesh networks and integrate enhanced security features such as Secure Boot with Root of Trust (RTSL).
Nexperia low VF (MEGA) schottky rectifiers in CFP3 and CFP5 FlatPower packages FlatPower schottky rectifiers Small on size - big on power
KYOCERA TCL Solar Completes 8.5MW Solar Power Plant on Reclaimed Island on Japan’s Largest Lake Press information
SSG2601 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.3 A, 20 V, RDS(ON) 25 mΩ P-Ch: -5.3A, -20 V, RDS(ON)75 mΩ数据手册 P-Ch: -5.3A, -20 V, RDS(ON) 75 mΩ
STEVAL-ISA096V1 Auxiliary power supply in buck-boost topology based on the Viper06 Auxiliary power supply in buck-boost topology based on the Viper06
LOW VOLTAGE, LOW RDS(on)POWER MOSFETSIN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on)Power MOSFETs In TO-254 And TO-258Isolated Packages
SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ
SUM3439 N-Ch: 0.75A, 20V, RDS(ON) 380 mΩ P-Ch: -0.66A, -20V, RDS(ON) 520 mΩ N & P-Ch Enhancement Mode Power MOSFET数据手册
SSG4536C N-Ch: 7.1A, 30V, RDS(ON) 28 mΩΩΩΩ P-Ch: -6A, -30V, RDS(ON) 39 mΩΩΩΩ N & P-Ch Enhancement Mode Power MOSFET数据手册
SSG4530C N-Ch: 5.3A, 30V, RDS(ON) 82 mΩΩΩΩ P-Ch: -5.2A, -30V, RDS(ON) 80 mΩΩΩΩ N & P-Ch Enhancement Mode Power MOSFET数据手册
Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics
Integrated Motion on the EtherNet/IP Network: Configuration and Startup ControlLogix, CompactLogix, Kinetix 350, Kinetix 5500, Kinetix 5700, Kinetix 6500, PowerFlex 527, PowerFlex 755
Getting started with the high power stepper motor driver expansion board based on powerSTEP01 for STM32 Nucleo
SK-G1-RB1-F8 Replacing a Balancing Resistor on a PowerFlex 700 Drive, Frames 8, 9, and 10 Installation Instructions
UM0890 User manual 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors
Analyzing the Effect VEE has on Viewability and Estimating the Power Savings of DPO Using a Standard Set of Images on a Handheld Device
The GBU10A, GBU10B, GBU10D, GBU10G, GBU10J, GBU10K, GBU10M series of single phase bridge rectifiers from Diotec are offered in the GBU package with 5.08mm pitch. The devices can be operated free-standing for up to 7.0A of output current as well as clipped onto a heatsink for up to 10A. They are ideally suited for printed circuit board assemblies. With a case length of 21.5mm and a thickness of 3.4mm it can be used even in tight assemblies where space is restricted.
To disable the front-panel control knob, scroll the flashing digit on the front-panel display to the right or left using the selection keys () until the flashing digit disappears. Notice that the control knob and all front-panel keys are now disabled while in the remote interface mode.The disabled state of the control knob is NOT stored with a ‘store/recall‘ operation.
3DPower™ FULL BRIDGE LLC TRANSFORMER + RESONANT CHOKE——A greener, space and cost saving solution for power electronics
Premo 3DPower™ is a revolutionary concept in power magnetics integration, were existing magnetics within conventional HEV On-Board Chargers and DCDC converters are merged into one single and compact product. 3DPower™ is the first product to integrate two magnetics components that share the same core and feature two orthogonal magnetic fields at all points within the core. Maximum power density is achieved by reducing the size and increasing the power dissipation with the latest high thermal conductive materials.
Renesas Electronics and Miromico Collaboration Brings to Market Enhanced LoRa® Module Based on Renesas Synergy™ Platform
Renesas Electronics Corporation，a premier supplier of advanced semiconductor solutions, and Miromico AG today announced their collaboration has produced the compact and low-power FMLR-61-x-RSS3 module based on LoRa® devices and wireless radio frequency technology. The new Miromico module enables customers to connect easily to LoRaWAN-based networks that are mushrooming across Europe. The new module employs the innovative Renesas Synergy™ Platform, giving customers access to microcontrollers (MCUs) and a large production-grade software package.
CYME Power Engineering Software and Solutions Optimal Power Flow Analysis Identify and resolve abnormal conditions on a transmission system
From businesses dependent on refrigeration and climate control to home health and elderly care, particularly in hotter or colder climates, power outages can have negative effects to both health and finances. Renesas’ power monitoring reference design for critical applications can provide peace of mind and intelligent data when the power goes out.
莱尼带高强度外护套的中压单芯电缆BETApower® XDMZ-MONO符合SEV标准，采用可根据要求提供铜管屏蔽的特殊设计，为优化屏蔽连接。XDMZ-Y中压电缆采用最简单的3芯电缆设计，由3根XDMZ-MONO单芯电缆绞合而成， 适用于对机械性能要求较低的电缆连接。XDMZ-Z多了一层外保护套，更加坚固耐磨。XDMZ-CLZ又多了一层轻质钢带进行加固，用于无保护的安装或高机械径向负载应用。
The 62000D programmable bidirectional DC power supplies have both power source and load characteristics
Chroma 62000D bidirectional DC power supplies offer two-quadrant operation with positive current/positive voltage as well as negative current/positive voltage, enabling both DC power output and regenerative DC loading. The absorbed energy feeds back to the grid with a conversion efﬁciency up to 93% and can operate in constant voltage, constant current, and constant power modes.
The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures only 3.9 mm x 2.6 mm x 0.8 mm for an 80 V, 12.5 A gallium-nitride based power stage integrated circuit.