SPICE Device Model SQJ474EP N-Channel 100 V (D-S) 175 °C MOSFET

知识图谱
2018-02-26 VISHAY 数据手册 英文
N沟道贴片MOS管,SQJ474EP,Vishay N沟道贴片MOS管,SQJ474EP,Vishay N沟道贴片MOS管,SQJ474EP,Vishay N沟道贴片MOS管,SQJ474EP,Vishay


●说明：
■所附的SPICE模型描述了n通道垂直双金属氧化物半导体的典型电气特性。在脉冲0 V至10 V栅极驱动下，在-55°C至+125°C的温度范围内提取和优化子电路模型。饱和输出阻抗在阈值电压附近的栅极偏置处最适合。

■在避免开关C-gd模型收敛困难的同时，使用了一种新型的栅-漏反馈电容网络来模拟栅极电荷特性。所有模型参数值都经过优化，以提供与测量的电气数据的最佳拟合，并且不是设备的精确物理解释。

●特点：

■N通道垂直数字多通道振荡器
■宏模型（子电路模型）
■3级MOS
■适用于线性和开关应用
■在-55°C至+125°C温度范围内准确
■模拟栅极电荷

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简写目录清单

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VISHAY  -  104 PHL-ST,B350A-M3,BAV21W-G,735DE,793DX-CTC3-CTC480D,SQ3456EV,BYS11-90,B40C800DM,AMWS,056/057 PSM-SI,CNY17G,SQ3410EV,CNY17F,SQ4946AEY,220 EDLC ENYCAP™,BYVF32-XXX,185 CPNZ,AC,100-267,AH,SQJ463EP,BCR,BYM11-XXX,BYQ28E-XXX,BPV23FL,A,AS3PJ,AS3PG,B,BAY135,AS3PK,SQJ474EP,SQ4946EY,AS3PD,T,CCF02 (CCF-2),4N35-X,SGL41-XX,1N5625,1N5624,1N5627,1N5626,BAS40-00,CH,BAV19WS-G,499D,CL,SQJ500AEP,CP,042 AMH-ELB,SQA401EJ,SQD50N03-4M3,BAS40-00-G,AZ23-G,BYWB29-XX,BYM12-XXX,B350B,SQ7002AK,125L,B350A,B125C800G,BYG22D,BYG22B,CNY64AYST,BYG22A,V..,BAS40-06,1N5401,1N5400,1N5403,1N5402,090 PUL-SI,1N4148WS-G,SQ3469EV,211D,126S,SQD50N03-09,695D,B240A,1N4448WS,31GF6-M3,SQJ461EP,BYG21M,561R,BYG21K,175 TMP,A...V,BYQ28EF-XXX,CNY117,1N5418,BAS21-G,1N5417,B330LA-M3,041 ASH,672D,A...R,BA157GP,3540/6,1N4002GP,BYG24G,SQ4330EY,BYG24D,BAL99-G,562R,AR4PM,BYG24J,AR4PG,SQA403EJ,AR4PK,SQ4483BEEY,APD-128G032A,564R,AR4PJ,SQD50N04-4M1,120 ATC,SQJ570EP,AR4PD,3KASMC43A,BAT54-G,SQ3426EEV,196 DLC,BYG23M,SQ9945BEY,2N7002E,BY251P,CNY117F,565R,BAV20WS,BY299P,SQ2364EES,31GF4-E3,5F...,1N4728A,BAS16WS-G,SQJ504EP,2N7002K,SQ2362ES,BP104,BAT54S,BY252P,BAR64V-05W,SQ4470EY,893D,181 CPL,BYV1,SQD50P04-09L,1N4246GP,BPV23NF,4N28-X,BAT54C,BAT54A,BAS19-G,BPW85,SAL-A,BAS70-00,BAS170WS,BPW83,BA159D,BAS70-06,BPW82,SQ4942EY,BYW8,1N5059GP,BYV28-100,BYW7,SQ3585EV,BY253P,BYW5,193 PUR-SI SOLAR,BYW3,198 PHR-SI,BPW16N,BPW17N,BYG20D,BYV98-100,B40C1500G,1N5221,BYG20J,BYG20G,20 LHE,20VL,SQ9407EY,SQ4953EY,BYX8,BY228-13,BY254P,BPV10NF,1N5407GP,BY228-15,SQD45P03-12,SQD90P04-9M4L,SQJ481EP,1N4150W,1N4148,715C..KT…,BA779-2-G,BAS85-M,SQ4920EY,3560/6,630D,1N4150,678D,1N4151,1N4154,140 RTM,SQD25N06-22L,180 CPS,109D,1N4151W,APD-240G120,BFC2 808 .....,197 PGP-SI,SQ7415EN,BYW27-200GP,BY296P,BYM10-XXX,BAT42WS,BYG24D-E3/HE3,4N26-X,APD-32A025A,SQ4483EY,SQJ415EP,BYWE29-100,31GF6-E3,043 AHH-ELB,BPW46,SQA410EJ,BAV70-G,159 PUL-SI COMPACT,259 PHM-SI,4N37-X,BAS40-02V-V-G,250 CRZ-V,BAT54W,1N5267,1N4448W-G,BYQ28EB..,139 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0612,BY520-16E,6KA24,BYWE29-50,BAV21WS-G,BYV29B-XX..,BYG21M-E3/HE3,1N4942GP,B125C800DM..,SQJ148EP,BAV19WS,BYS12-90,BYT56G,134 RLP 5,136D,SQJ409EP,BYT56B,BYT56D,572D,BYT56A,790D,BA679S-M

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VISHAY  -  P通道MOSFET晶体管,P-CHANNEL MOSFET,AUTOMOTIVE P-CHANNEL MOSFET,汽车用P沟道MOSFET,POWER MOSFET,功率 MOSFET,SQJ412EP,SQJ410EP-T1_GE3,SQJ474EP-T1_GE3,SQJ456EP,SQJ479EP,SQJ401EP-T1-GE3,SQJ431EP,SQJ410EP,SQJ486EP-T1_GE3,SQJ422EP-T1_GE3,SQJ416EP,SQJ431EP-T1_GE3,SQJ418EP,SQJ416EP-T1_GE3,SQJ422EP-T1-GE3,SQJ456EP-T1_GE3,SQJ202EP-T1_GE3,SQJ401EP-T1_GE3,SQJ465EP-T1_GE3,SQJ459EP-T1_GE3,SQJ402EP,SQJ423EP,SQJ469EP,SQJ403EEP-T1_GE3,SQJ461EP-T1_GE3,SQJ443EP-T1-GE3,SQJ446EP,SQJ488EP,SQJ444EP,SQJ465EP,SQJ486EP,SQJ463EP,SQJ431EP-T1-GE3,SQJ479EP-T1_GE3,SQJ403EP-T1_GE3,SQJ444EP-T1_GE3,SQJ403EEP-T1-GE3,SQJ403EEP,SQJ412EP-T1-GE3,SQJ402EP-T1_GE3,SQJ443EP-T1_GE3,SQJ461EP,SQJ488EP-T1-GE3,SQJ465EP-T1-GE3,SQJ459EP,SQJ457EP,SQJ476EP,SQJ474EP,SQJ200EP-T1_GE3,SQJ200EP,SQJ202EP,SQJ457EP-T1_GE3,SQJ463EP-T1_GE3,SQJ488EP-T1_GE3,SQJ460AEP-T1_GE3,SQJ469EP-T1-GE3,SQJ402EP-T1-GE3,SQJ418EP-T1_GE3,SQJ461EP-T1-GE3,SQJ500AEP-T1-GE3,SQJ401EP,SQJ403EP,SQJ460AEP,SQJ443EP,SQJ422EP,SQJ476EP-T1_GE3,SQJ500AEP,SQJ412EP-T1_GE3,SQJ463EP-T1-GE3,SQJ469EP-T1_GE3,SQJ486EP-T1-GE3,SQJ410EP-T1-GE3,SQJ456EP-T1-GE3,SQJ423EP-T1_GE3,SQJ446EP-T1_GE3,汽车,AUTOMOTIVE

SQJ422EP汽车N通道40 V（D-S）175°C MOSFET

10-Dec-12  - 数据手册 该资料详细介绍了Vishay Siliconix公司生产的SQJ422EP汽车级N通道40V (D-S) 175°C MOSFET。该产品适用于汽车电子领域，具有高可靠性、低导通电阻和宽工作温度范围等特点。

VISHAY  -  N-CHANNEL MOSFET,N沟道贴片MOS管,SQJ412EP,SQJ410EP-T1_GE3,SQJ474EP-T1_GE3,SQJ456EP,SQJ479EP,SQJ401EP-T1-GE3,SQJ431EP,SQJ410EP,SQJ486EP-T1_GE3,SQJ422EP-T1_GE3,SQJ416EP,SQJ431EP-T1_GE3,SQJ418EP,SQJ416EP-T1_GE3,SQJ422EP-T1-GE3,SQJ456EP-T1_GE3,SQJ202EP-T1_GE3,SQJ401EP-T1_GE3,SQJ465EP-T1_GE3,SQJ459EP-T1_GE3,SQJ402EP,SQJ423EP,SQJ469EP,SQJ403EEP-T1_GE3,SQJ461EP-T1_GE3,SQJ443EP-T1-GE3,SQJ446EP,SQJ488EP,SQJ444EP,SQJ465EP,SQJ486EP,SQJ463EP,SQJ431EP-T1-GE3,SQJ479EP-T1_GE3,SQJ403EP-T1_GE3,SQJ444EP-T1_GE3,SQJ403EEP-T1-GE3,SQJ403EEP,SQJ412EP-T1-GE3,SQJ402EP-T1_GE3,SQJ443EP-T1_GE3,SQJ461EP,SQJ488EP-T1-GE3,SQJ465EP-T1-GE3,SQJ459EP,SQJ457EP,SQJ476EP,SQJ474EP,SQJ200EP-T1_GE3,SQJ200EP,SQJ202EP,SQJ457EP-T1_GE3,SQJ463EP-T1_GE3,SQJ488EP-T1_GE3,SQJ460AEP-T1_GE3,SQJ469EP-T1-GE3,SQJ402EP-T1-GE3,SQJ418EP-T1_GE3,SQJ461EP-T1-GE3,SQJ500AEP-T1-GE3,SQJ401EP,SQJ403EP,SQJ460AEP,SQJ443EP,SQJ422EP,SQJ476EP-T1_GE3,SQJ500AEP,SQJ412EP-T1_GE3,SQJ463EP-T1-GE3,SQJ469EP-T1_GE3,SQJ486EP-T1-GE3,SQJ410EP-T1-GE3,SQJ456EP-T1-GE3,SQJ423EP-T1_GE3,SQJ446EP-T1_GE3,汽车,AUTOMOTIVE

SQJ457EP汽车P沟道60 V（D-S）175°C MOSFET

13-Jun-16  - 数据手册 该资料详细介绍了Vishay Siliconix公司生产的SQJ457EP汽车级P沟道60V (D-S) 175°C MOSFET的产品信息，包括产品概述、特性、规格、热性能、封装信息等。

VISHAY  -  P通道MOSFET晶体管,P-CHANNEL MOSFET,AUTOMOTIVE P-CHANNEL MOSFET,POWER MOSFET,汽车用P沟道MOSFET,功率 MOSFET,SQJ412EP,SQJ410EP-T1_GE3,SQJ474EP-T1_GE3,SQJ456EP,SQJ479EP,SQJ401EP-T1-GE3,SQJ431EP,SQJ410EP,SQJ486EP-T1_GE3,SQJ422EP-T1_GE3,SQJ416EP,SQJ431EP-T1_GE3,SQJ418EP,SQJ416EP-T1_GE3,SQJ422EP-T1-GE3,SQJ456EP-T1_GE3,SQJ202EP-T1_GE3,SQJ401EP-T1_GE3,SQJ465EP-T1_GE3,SQJ459EP-T1_GE3,SQJ402EP,SQJ423EP,SQJ469EP,SQJ403EEP-T1_GE3,SQJ461EP-T1_GE3,SQJ443EP-T1-GE3,SQJ446EP,SQJ488EP,SQJ444EP,SQJ465EP,SQJ486EP,SQJ463EP,SQJ431EP-T1-GE3,SQJ479EP-T1_GE3,SQJ403EP-T1_GE3,SQJ444EP-T1_GE3,SQJ403EEP-T1-GE3,SQJ403EEP,SQJ412EP-T1-GE3,SQJ402EP-T1_GE3,SQJ443EP-T1_GE3,SQJ461EP,SQJ488EP-T1-GE3,SQJ465EP-T1-GE3,SQJ459EP,SQJ457EP,SQJ476EP,SQJ474EP,SQJ200EP-T1_GE3,SQJ200EP,SQJ202EP,SQJ457EP-T1_GE3,SQJ463EP-T1_GE3,SQJ488EP-T1_GE3,SQJ460AEP-T1_GE3,SQJ469EP-T1-GE3,SQJ402EP-T1-GE3,SQJ418EP-T1_GE3,SQJ461EP-T1-GE3,SQJ500AEP-T1-GE3,SQJ401EP,SQJ403EP,SQJ460AEP,SQJ443EP,SQJ422EP,SQJ476EP-T1_GE3,SQJ500AEP,SQJ412EP-T1_GE3,SQJ463EP-T1-GE3,SQJ469EP-T1_GE3,SQJ486EP-T1-GE3,SQJ410EP-T1-GE3,SQJ456EP-T1-GE3,SQJ423EP-T1_GE3,SQJ446EP-T1_GE3,汽车,AUTOMOTIVE

勒森图贴片圆柱金属膜电阻的产品选型表

选型表  -  勒森图 勒森图提供如下贴片圆柱金属膜电阻的产品选型,覆盖产品均适配≤200V 电压量程,核心选型维度包含型号,品类,电压量程,最大功率,源精度,电阻温度系数,(T.C.R.)及测量精度七大项,产品按额定功率分为 0.25W和0.4W两大系列,可匹配不同精度与功率场景的选型需求

产品型号
品类
电压量程
最大功率
源精度
T.C.R. PPM/℃
测量精度
SMM02040D2672BB300-LST
贴片圆柱金属膜电阻
≤200V
0.25W
 0.1%
25PPM
0.001
立即选型
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鑫飞宏MOS管选型表

选型表  -  鑫飞宏 鑫飞宏提供MOSFET功率器件选型，涵盖N沟道、P沟道、N+P双沟道及半桥驱动等细分品类，电压覆盖±12V至500V，电流范围0.7A-330A，Rds(on)低至0.8mΩ。产品支持2.5V/4.5V/10V多栅极驱动电压，部分型号集成ESD保护。封装形式多样，包括SOT-23/523、DFN2x2/3x3、PDFN3.3x3.3/5x6、TO-252/263、TOLL及WLCSP等，适用于消费电子、电机驱动、电源管理及工业控制领域。

产品型号
品类
VDS
ID
Vgs (±V)
Vth(V)
ESD Diode
RDS(on) mΩ 10V(Typ)
RDS(on) mΩ 10V(Max)
RDS(on) mΩ 4.5V(Typ)
RDS(on) mΩ 4.5V(Max)
RDS(on) mΩ 2.5V(Typ)
RDS(on) mΩ 2.5V(Max)
Ciss Typ(pF)
Qg Typ(nC)
Type
Package
FHC1208
MOS管
12(Vss)
8(Is)
8
0.4~1.4
Yes
/
/
4.7(Rss)
5.5(Rss)
6.8(Rss)
9.0(Rss)
2760
24.7
N+N
WLCSP6-2.14x1.67x0.1
立即选型
代理服务
技术支持 采购服务

鲁光电子(LGE)MOSFET选型表

选型表  -  鲁光电子 鲁光提供多种MOSFET选型，覆盖N沟道/P沟道、高压600V-1700V、大电流0.1A-152A全谱；封装含TO-220/247/263、SOT-23/323/523、DFN、PDFN5×6-8L等，Rdson低至0.0024Ω，Qg<5nC超低栅荷，Coss<50pF高速，TJ 150-175℃，适配电源、电机、光伏、车载等需求。

产品型号
品类
封装/外壳/尺寸
PD(W)
ID
VDSS(V)
Polarity
Qg(nC)@10V(typ)
VGSS(V)
RDS(on)mΩ@10V
LGE1N60P
MOSFET
TO-220AB
40
1.2A
600
N
5
±30
9300
立即选型
代理服务
技术支持 采购服务
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品牌：格瑞宝电子

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