Infineon GTVA123501FA 新GaN射频功率管数据手册

2016-12-28

INFINEON/54

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射频放大器

GTVA123501FA

型号

数据手册

英文

332 KB

2016年05月23日

Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
advance specification
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification – DRAFT ONLY 1 of 4 Rev. 01, 2016-05-23
GTVA123501FA
Confidential, Limited Internal Distribution
advance specification
GTVA123501FA
Package H-37265J-2
Thermally-Enhanced High Power RF GaN HEMT
350 W, 50 V, 1200 - 1400 MHz
Features
GaN HEMT technology
Broadband internal input matching
Pb-free and RoHS compliant
Description
The GTVA123501FA is a 350-watt GaN high electron mobility transis-
tor (HEMT) for use in the 1200 to 1400 MHz frequecy band. It features
input matching, high efficiency, and a thermally-enhanced surface-
mount package with earless flange.
Target RF Characteristics
Typical RF Performance (tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 300 mA, P
OUT
= 350 W, ƒ = 1200 - 1400 MHz, Pulse Width = 300 µs, DC = 10%
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
— 18 dB
Drain Efficiency h
D
— 71 %
advance specification
GTVA123501FA
Confidential, Limited Internal Distribution
Advance Specification – DRAFT ONLY 2 of 4 Rev. 01, 2016-05-23
advance specifica
tion
Pinout Diagram (top view)
Lead connections for GTVA123501FA
S
D
G
Pin Description
D Drain Device
G Gate Device
S Source (flange)
DC Characteristics (measured on wafer prior to packaging)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-source Breakdown Voltage V
GS
= –8 V, I
D
= TBD mA V
(BR)DSS
150 V
Drain Source Leakage Current V
GS
= –8 V, V
DS
= 10 V I
DSX
TBD mA
Gate Threshold Voltage V
DS
= 10 V, I
D
= TBD mA V
GS(th)
TBD TBD TBD V
Gate Quiescent Voltage V
DS
= 50 V, I
D
= TBD A V
GS(Q)
— TBD — V
Maximum Ratings
Parameter Symbol Value Unit
Drain-source Voltage V
DSS
125 V
Gate-source Voltage V
GS
–10 to +2 V
Operating Voltage V
DD
0 to +50 V
Gate Current I
G
TBD mA
Drain Current I
D
TBD A
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistance (T
CASE
= 70°C) R
qJC
TBD °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
GTVA123501FA V1 R0 TBD H-37265J-2, earless flange Tape & Reel, 50 pcs
GTVA123501FA V1 R2 TBD H-37265J-2, earless flange Tape & Reel, 250 pcs
advance specification
Advance Specification – DRAFT ONLY 3 of 4 Rev. 01, 2016-05-23
GTVA123501FA
Confidential, Limited Internal Distribution
advance specification
Package Outline Specifications
Package H-37265J-2
C
L
L
C
D
G
2X 6.35
[.250]
LID
10.16±.25
[.400±.010]
FLANGE
10.16
[.400]
45° X .64
[.025]
2X 2.59±.51
[.102±.020]
10.16±.25
[.400±.010]
SPH 1.57
[.062]
FLANGE
4X R0.63
[R.025] MAX
1.02
[.040]
S
(15.34
[.604])
3.61±.38
[.142±.015]
10.16
[.400]
H-37265J-2_02_po_05-29-2015
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
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