【产品】容量512M高速双倍速率DRAM，高存储带宽场合首选
AS4C32M16D1A-C&I是ALLIANCE推出的一款高速CMOS双倍数据速率同步DRAM，其系统容量为512M。该器件基于高性能CMOS技术制造，内部配置为具有同步接口的四通道8M×16 DRAM（所有信号都在时钟信号CK的上升沿寄存），助力实现完全同步操作。该DRAM存储器被广泛应用于需要高存储带宽的场合，尤其适用于高性能主存储器和图形应用领域。
CMOS动态随机存储器AS4C32M16D1A-C&I采用双倍数据率架构，利用两个不同时钟边沿（CK的上升沿，CK#的上升沿）对数据进行锁存，此设计使得该存储器在时钟频率相同的情况下，与传统SDRAM存储器相比，可将数据传输速率提升一倍。
AS4C32M16D1A-C&I的快速时钟频率为200MHz，电源电压为2.5V ±0.2V，能够有效地降低芯片功耗，从而增加元件的使用寿命。此外，该芯片具有自动刷新和自刷新功能，提供2、4或8的可编程读或写突发长度。可编程模式寄存器和扩展模式寄存器的存在，使得系统可选择最适合的模式来达到最优性能。
CMOS动态随机存储器AS4C32M16D1A-C&I的特性：
• 工作温度
--商业级（0℃?70℃）
--工业级（-40℃?85℃）
• 可编程模式和扩展模式寄存器
--CAS延迟：2，2.5，3
--突发长度：2, 4, 8
--突发类型：顺序或交错
• 差分时钟CK和CK#
• DLL可选
• 8192刷新周期/64ms
• 66引脚TSOP II封装，0.65mm引脚间距
• 无铅和无卤素
相关技术文档：
Alliance AS4C32M16D1A-C&I 数据手册 详情>>>
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Alliance Memory AS4C32M16D1A-C&I 数据手册
2015年03月12日 - 数据手册 该资料为AS4C32M16D1A-C&I型DDR SDRAM的数据手册。介绍了其技术规格、功能特性、操作模式、引脚分配、电气特性等详细信息。
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ALLIANCE 存储器选型表
选型表 - ALLIANCE 提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型，VCC(V)：0.6-5，MSL LEVEL：0-5，CLOCK(MHz)：133-1866，可支持商业级/工业级/汽车级。
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产品型号
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品类
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DENSITY
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MSL LEVEL
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MODE or DATA RATE(Mbps/pin)
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VCC(V)
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PACKAGE
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TEMPERATURE RANGE(°C)
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ORGANISATION
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Product Family
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CLOCK(MHz)
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AS4C32M16D1A-5TINTR
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存储器
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512M - A die
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3
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400Mbps/pin
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2.5V
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66pin TSOP II
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Industrial (-40 ~ 85°C)
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32M x 16
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DDR1-MT46
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200Mhz
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