CT2010F系列 Smiths Interconnect
产品特性
  • 阻抗:50 Ω
  • 频率范围:DC - 4 GHz
  • VSWR:1.25:1 Max.
  • 输入功率:热沉100°C时为20瓦特(线性降至0瓦特于125°C)
  • 非工作温度:-55°C 至 +150°C
  • 工作温度:-55°C 至 +125°C
  • 封装材料:氧化铍、厚膜电阻元件、厚膜终端和接地平面(镍阻挡层,符合RoHS标准)
知识图谱

产品目录

订货型号 型号系列 品类 描述 封装/外壳/尺寸 生命周期 停产时间 Impedance Frequency Range Power Rating Derates to Operating Temperature Resistive Material Terminal Material

CT2010F

CT2010F
射频负载
HIGH POWER CHIP TERMINATION, BERYLLIA, LEAD FREE PLATING.
-
有效(ACTIVE)
-
50 Ohms
DC to 26.5 GHz
100% @ 100°C
0% @ 150 °C
-55 °C to 150 °C
Thick Film
厚膜、镍阻挡层、焊料、银 (RoHS) 或金

资料下载

数据手册 - 英文
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技术问答

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产品型号
品类
Size(mm)
Impedance(Ω)
Frequency Range(GHz)
TCA Tolerance(dB/dB/˚C)
VSWR (Typical)
Power Rating(W、mW)
Operating Temperature(℃)
Substrate
Resistive Material
Terminal Material
TVA0500N07W1S
ATTENUATOR
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50Ω
DC-6GHz
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1.30@1GHz
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