QPM3-1200-0032A

  • engineering sample Gen3 1200V/32mOhm SiC MOSFET die (QPM3-1200-0032A) each capable of supporting a minimum drainsource breakdown voltage (VBR-IDSS) of 1200V DC and with a nominal on-resistance (RDS-ON) of 32 mOhm at VGS = 15V and 25C.

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系列 QPM3QPM3-1200
最小包装量 1
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QPM3、QPM3-1200系列

engineering sample Gen3 1200V/32mOhm SiC MOSFET die (QPM3-1200-0032A) each capable of supporting a minimum drainsource breakdown voltage (VBR-IDSS) of 1200V DC and with a nominal on-resistance (RDS-ON) of 32 mOhm at VGS = 15V and 25C.

原厂认证

世强代理

最小包装量1

QPM3、QPM3-1200系列

Ea. engineering sample Gen3 1200V/16mOhm SiC MOSFET die (QPM3-1200-0016A) each capable of supporting a minimum drainsource breakdown voltage (VBR-IDSS) of 1200V DC and with a nominal on-resistance (RDS-ON) of 16 mOhm at VGS = 15V and 25C.

原厂认证

世强代理

最小包装量1

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