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SEMIHOW - N沟道沟槽场截止IGBT,N-CHANNEL TRENCH FIELD STOP IGBT,HGW75N65IH,SOLAR CONVERTERS,HIGH FREQUENCY CONVERTERS,太阳能转换器,电磁炉,INDUCTION COOKING,高频变换器
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SEMIHOW - N沟道沟槽场截止IGBT,N-CHANNEL TRENCH FIELD STOP IGBT,HGW75N65T,UNINTERRUPTIBLE POWER SUPPLIES,WELDING CONVERTERS,SOLAR,不间断电源,电动机驱动器,焊接转换器,UPS,不断电系统,太阳的,MOTOR DRIVERS
HIA75N65H-SA 650V N沟道沟槽场截止IGBT
Dec 2024 - 数据手册 本资料详细介绍了HIA75N65H-SA型650V N-Channel Trench Field Stop IGBT的特性、参数和应用领域。该产品具有非常低的VCE(sat)、极低的开关损耗、优异的稳定性和均匀性，适用于太阳能转换器、不间断电源（UPS）、功率因数校正（PFC）、焊接转换器和高频转换器等领域。
SEMIHOW - IGBT,HIA75N65H-SA,高频转换器,太阳能转换器,焊接转换器,功率因数校正（PFC）,不间断电源（UPS）
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HIA30N140IH-DB 1400V N沟道沟槽场截止IGBT
Mar 2024 - 数据手册 本资料介绍了HIA30N140IH-DB型1400V N-Channel Trench Field Stop IGBT的关键参数、电气特性、热阻特性以及应用领域。该器件具有低饱和电压、极低的开关损耗、良好的稳定性和均匀性等特点，适用于感应烹饪和微波炉等领域。
SEMIHOW - N沟道沟槽场截止IGBT,N-CHANNEL TRENCH FIELD STOP IGBT,HIA30N140IH-DB,微波炉,MICROWAVE OVENS,电磁炉,INDUCTION COOKING
HIA30N160IH-DA 1600V N沟道沟槽场截止IGBT
Aug 2024 - 数据手册 本资料介绍了HIA30N160IH-DA型1600V N-Channel Trench Field Stop IGBT的关键参数、电气特性、热阻特性和封装尺寸。该器件具有低饱和电压、极低的开关损耗、优异的稳定性和均匀性，适用于感应烹饪和微波炉等应用。
SEMIHOW - N沟道沟槽场截止IGBT,N-CHANNEL TRENCH FIELD STOP IGBT,HIA30N160IH-DA,微波炉,MICROWAVE OVENS,电磁炉,INDUCTION COOKING
SEMTECH ST中低压功率MOS管选型表
选型表 - SEMTECH ST 先之科中低压功率MOS管提供选型：产品涵盖N沟道、P沟道以及双管型号，提供包括DFN3030、DFN5060、TO-220FB、TO-247-3、TOLL等14种先进封装形式，适用于电源管理、电机驱动、LED照明、汽车电子及工业控制等广泛领域。该系列MOS管提供全电压段覆盖，从低压12V到高压200V，满足各类电源拓扑的耐压需求。导通电阻低至0.7mΩ，配合大电流能力514A，可实现高效率的功率开关。栅源阈值电压低至0.3V，兼容3.3V/5V逻辑电平驱动，便于直接与MCU或驱动器接口。
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产品型号
|
品类
|
封装
|
Polarity
|
ESD Protection
|
VDS (V)
|
ID max (A)Tc= 25°C
|
VGS(th) (V)Min
|
VGS(th) (V)Max
|
RDSon(mΩ) at 4.5V/Typ
|
RDSon(mΩ) at 4.5V/Max
|
Qg Typ （nC）
|
|
STM3038N02UA1SK
|
中低压功率MOS管
|
DFN3030
|
N
|
Y
|
12
|
87
|
0.3
|
1
|
2.9
|
3.8
|
79
|
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定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
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