AOT260L/AOB260L 60V N-Channel MOSFET
●一般说明
■AOT（B）260L采用沟槽MOSFET技术，该技术经过独特优化，可提供最高效的高频开关性能。由于R-DS（ON）和CRS的组合极低，功率损耗降至最低。此外，“肖特基风格”软恢复体二极管可以很好地控制开关行为。该设备非常适合用于消费品、电信、工业电源和LED背光的升压转换器和同步整流器
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产品型号
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品类
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封装
|
工艺
|
沟道
|
Vos_Max(V)
|
DMax(A)
|
Ves(t)Typ(V)
|
Ves_Max(V)
|
C iss_Typ(pF)
|
Rps(ON)_Typ @VGS=10V(mΩ)
|
Ros(OMLTyp@VGS=4.5V(mΩ)
|
|
OCT2N10TS
|
中低压MOS
|
SOT-23
|
Trench
|
N
|
100
|
2.0
|
1.5
|
±20
|
321
|
220
|
250
|
华润微电子N+P MOS选型表
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产品型号
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品类
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Polarity
|
VDS(V)
|
ID(A)
|
Typ RDS(ON)@VGS=10V(mΩ)
|
Max RDS(ON)@VGS=10V(mΩ)
|
Typ RDS(ON)@VGS=4.5V(mΩ)
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Max RDS(ON)@VGS=4.5V(mΩ)
|
Min VGS(TH) (V)
|
Max VGS(TH) (V)
|
Qg(nC)
|
Ciss(pF)
|
|
CRMM4606
|
N+P沟道MOSFET
|
N+P
|
±30
|
±7
|
25/26
|
30/31.2
|
35/37
|
42/44.4
|
1/-1
|
3/-2
|
10.1
|
382
|
华润微电子N+N MOS选型表
选型表 - 华润微电子 华润微电子提供N+N沟道MOSFET器件选型，涵盖CRMM9926、CRMV0318D、CRME0402D、CRMD0041S等型号。核心参数：VDS 20V–100V，ID 4A–48A，RDS(ON)@VGS=10V典型值7.2mΩ–86.4mΩ，VGS(TH)最小0.4V–1.5V、最大1V–3V，Qg 7.2nC–62.5nC，Ciss 318pF–2350pF。产品覆盖低压小功率至高压大电流场景，高耐压型号RDS(ON)和Qg偏高，大电流型号如CRMD0041S（48A）RDS(ON)仅12mΩ typ但Ciss达1726pF。适用于电源管理、电机驱动、DC-DC转换等，用户可按耐压、电流、效率、开关速度筛选最优型号。
|
产品型号
|
品类
|
Polarity
|
VDS(V)
|
ID(A)
|
Typ RDS(ON)@VGS=4.5V(mΩ)
|
Max RDS(ON)@VGS=4.5V(mΩ)
|
Min VGS(TH) (V)
|
Max VGS(TH) (V)
|
Qg(nC)
|
Ciss(pF)
|
|
CRMM9926
|
N+N沟道MOSFET
|
N+N
|
20
|
7
|
25
|
30
|
0.4
|
1
|
7.2
|
361
|
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