GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz
-
代理服务
●一般说明
■HMC-AUH317是一种高动态范围、三级砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器，工作频率为81至86 GHz。HMCAUH317在+4V电源电压的1 dB压缩下提供22 dB的增益和+17.5 dBm的输出功率。所有焊盘和芯片背面均为钛/金金属化，放大器装置完全钝化，以确保可靠运行。HMC-AUH317砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器与传统的芯片连接方法以及热压和热超声引线键合兼容，使其成为MCM和混合微电路应用的理想选择。本文所示的所有数据均在50欧姆的环境中用芯片测量，并与射频探针接触。
●特征
■增益：22 dB
■P1dB:+17.5 dBm
■电源电压：+4V
■50欧姆匹配输入/输出
■模具尺寸：2.65 x 1.6 x 0.05 mm
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HMC-AUH318砷化镓高电子迁移率晶体管微波单片集成电路中等功率放大器，71-76 GHz
2018/01/01 - 数据手册 HMC-AUH318是一款工作在71至76 GHz频段的GaAs HEMT MMIC中功率放大器，适用于短距离/高容量链路、测试测量设备和E波段通信系统。该放大器提供24 dB的增益和+17.5 dBm的输出功率，具有50欧姆匹配的输入/输出阻抗。
ADI - 砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器,GAAS HEMT MMIC MEDIUM POWER AMPLIFIER,HMC-AUH318,TEST & MEASUREMENT EQUIPMENT,E-BAND COMMUNICATION SYSTEM,测试与测量设备,E波段通信系统
HMC-APH596砷化镓高电子迁移率晶体管微波单片集成电路中等功率放大器，16-33 GHz
2018/01/01 - 数据手册 HMC-APH596是一款16至33GHz频段的GaAs HEMT MMIC中功率放大器，适用于点对点、点对多点无线电、VSAT和军事及太空通信等领域。该放大器提供17dB的增益和+24dBm的输出功率，具有50欧姆匹配的输入/输出，并支持常规的芯片贴装方法。
ADI - TWO STAGE GAAS HEMT MMIC MEDIUM POWER AMPLIFIER,砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器,两级砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器,GAAS HEMT MMIC MEDIUM POWER AMPLIFIER,HMC-APH596,SPACE,POINT-TO-POINT RADIOS,甚小孔径终端,POINT-TO-MULTI-POINT RADIOS,VSAT,军事的,太空,点对点无线电,点对多点无线电,MILITARY
HMC-APH196砷化镓高电子迁移率晶体管微波单片集成电路中等功率放大器，17-30 GHz
2018/01/01 - 数据手册 HMC-APH196是一款17至30 GHz频段的GaAs HEMT MMIC中功率放大器，适用于点对点、点对多点无线电、VSAT和军事/空间应用。该放大器提供20 dB的增益，在20 GHz时输出功率为+22 dBm，具有+31 dBm的输出IP3和50欧姆匹配的输入/输出。
ADI - TWO STAGE GAAS HEMT MMIC MEDIUM POWER AMPLIFIER,砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器,两级砷化镓高电子迁移率晶体管微波单片集成电路中功率放大器,GAAS HEMT MMIC MEDIUM POWER AMPLIFIER,HMC-APH196,SPACE,POINT-TO-POINT RADIOS,甚小孔径终端,POINT-TO-MULTI-POINT RADIOS,VSAT,军事的,太空,点对点无线电,点对多点无线电,MILITARY
SEMTECH ST达林顿三极管选型表
选型表 - SEMTECH ST 先之科提供达林顿三极管选型：涵盖NPN和PNP两种极性配置。达林顿管由两只三极管复合连接，具有极高的电流放大倍数，可用微小的基极电流控制较大的集电极电流，广泛应用于功率放大、开关驱动、电机驱动、继电器驱动、LED驱动及各类需要高增益电流放大的场合。产品提供6种封装形式，从小信号放大到大功率开关均有覆盖。该系列达林顿管电流放大倍数高达140000，可用极小的控制电流驱动大功率负载，简化驱动电路设计。集电极电流能力最高10A，配合2.3W的功耗能力，可满足中等功率开关和放大需求。饱和压降低至2V以内，降低了导通损耗。特征频率最高220MHz，适用于中高频开关应用。NPN/PNP双极性覆盖，方便推挽和桥式驱动电路设计。
|
产品型号
|
品类
|
封装
|
Polarity
|
PD(W)
|
VCBO(V)
|
VCEO(V)
|
IC (A)
|
HFE_Min
|
HFE_Max
|
Vcesat(V)
|
fT(MHZ)
|
|
FCX605U
|
达林顿三极管
|
SOT-89
|
NPN
|
1
|
140
|
120
|
1
|
2000
|
100000
|
1
|
150
|
SEMTECH ST中低压功率MOS管选型表
选型表 - SEMTECH ST 先之科中低压功率MOS管提供选型：产品涵盖N沟道、P沟道以及双管型号，提供包括DFN3030、DFN5060、TO-220FB、TO-247-3、TOLL等14种先进封装形式，适用于电源管理、电机驱动、LED照明、汽车电子及工业控制等广泛领域。该系列MOS管提供全电压段覆盖，从低压12V到高压200V，满足各类电源拓扑的耐压需求。导通电阻低至0.7mΩ，配合大电流能力514A，可实现高效率的功率开关。栅源阈值电压低至0.3V，兼容3.3V/5V逻辑电平驱动，便于直接与MCU或驱动器接口。
|
产品型号
|
品类
|
封装
|
Polarity
|
ESD Protection
|
VDS (V)
|
ID max (A)Tc= 25°C
|
VGS(th) (V)Min
|
VGS(th) (V)Max
|
RDSon(mΩ) at 4.5V/Typ
|
RDSon(mΩ) at 4.5V/Max
|
Qg Typ （nC）
|
|
STM3038N02UA1SK
|
中低压功率MOS管
|
DFN3030
|
N
|
Y
|
12
|
87
|
0.3
|
1
|
2.9
|
3.8
|
79
|
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