【产品】60V/34A功率 MOSFET，4.5V栅极驱动

时间： 2018-02-09 来源：SHINDENGEN(世强编辑整理) 发布者：新电元（上海）电子有限公司

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P34F6EL是SHINDENGEN（新电元）公司推出的一款采用绝缘封装的功率MOSFET。该功率MOSFET的电容较低，可实现高速开关功能，其输入电容典型值为1960pF，反向传输电容典型值为130pF，输出电容典型值为240pF。此外，P34F6EL还具有较低的静态导通电阻，在直流连续漏极电流为17A，栅源电压为10V的测试条件下，其静态导通电阻典型值为9.0mΩ，较低的静态导通电阻使其功率损耗降低，有效的提升了系统效率。

P34F6EL采用4.5V栅极驱动，储存温度为-55~150℃，沟道温度最大值为150℃，漏源电压为60V，栅源电压为±20V，连续漏极电流为34A，连续漏极电流峰值为136A，可满足大功率驱动应用需求。P34F6EL的全功率损耗为35W，在温度为Tch=25℃的测试条件下，单脉冲雪崩电流为27A，单脉冲雪崩能量为36mJ。

P34F6EL的绝缘耐压值为2kV，在漏源电压为48V，栅源电压为10V，直流连续漏极电流为34A的测试条件下，其总栅极电荷典型值为41nC，栅源电荷典型值为7nC，栅漏电荷典型值为12nC。P34F6EL采用FTO-220AG（SC-91）封装, 尺寸大小为28.5mm×10.0mm×4.5mm。

图1 功率MOSFET P34F6EL实物图

功率MOSFET P34F6EL特点：

·漏源电压为60V，栅源电压为±20V；

·连续漏极电流为34A，连续漏极电流峰值为136A；

·全功率损耗为35W；

·总栅极电荷典型值为41nC；

·单脉冲雪崩电流为27A，单脉冲雪崩能量高达36mJ（Tch=25℃）;

·静态导通电阻典型值为9mΩ（I_D=17A，V_DS=10V）；

·采用FTO-220AG（SC-91）封装, 尺寸大小为28.5mm×10.0mm×4.5mm；

·存储温度范围：-55~150℃，沟道温度最大值为150℃。

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Semiconductor Part number index GENERAL RECTIFYING DIODES BRIDGE DIODES SCHOTTKY BARRIER DIODES FAST RECOVERY DIODES THYRISTORS/SIDACs/TRIACs/SURGE ABSORBERS TVS POWER MOSFETs/POWER MODULES/POWER Ics PACKAGE LIST & PRODUCTS OUTLINE DIMENSIONS PACKING SPECIFICATION/NOTES

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