Shindengen Developed Low Withstand Voltage Trench Structure MOSFET EETMOS Compact Package LF Series, Achieving both Lower Ron and Lower Qg
SHINDENGEN Electric Manufacturing Co., Ltd. (Headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) has expanded its lineup with the development of the low withstand voltage trench structure MOSFET EETMOS LF Series, which is suited for use in various consumer and vehicle-mounted high current drive circuits, various power supply circuits, relay applications, and more.
Overview
In recent years, the automotive market has seen an increase in the number of ECU components installed as a result of the addition of new ECU such as safety devices including heads-up displays, the shift to electric automobiles, and automated driving, as well as information device-related components.
At the same time, there has also been an increasing focus on improving fuel consumption, and this has resulted in ever-increasing needs for more compact components aimed at making lighter weight ECU.
Shindengen was already engaged in the mass production of MOSFET which meet these needs. However, the development of the compact, high-current package LF Series utilizes a new package structure and achieves both lower Ron and lower Qg than conventional products.
*EETMOS is a registered trademark of Shindengen under Japanese law.
Features
Cu clip internal structure allows for the achievement of low Ron and high current in a 5×6mm size compact package
Can be used as a replacement for SOP8 and HSON-type packages
Covers a low withstand voltage to medium withstand voltage range of 40V to 120V
The use of a gull-wing shape for one side of the lead alleviates substrate stress while plating of the tip improves and provides high reliability
Tj=175℃ guaranteed
Based on the AEC-Q101 standard
Recommended Applications
Various motor drive circuits
Various power circuits
Relays, etc.
Development Roadmap
The 4th generation achieves a 50% reduction over the 2nd generation for performance index RDS（ON） *A
Product Diagram
（Can be used as a replacement for 5×6mm size packages.）
Samples, Mass Production Period
For Consumers
Samples: January 2018
Mass Production: May 2018
For vehicle installations
Samples: June 2018
Mass Production: December 2018
Production Factory
Higashine Shindengen Co., Ltd. etc
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本文由玄子转载自Shindengen News，原文标题为:Announcement of the Development of the Low Withstand Voltage Trench Structure MOSFET EETMOS Compact Package LF Series，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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